ALUMINUM ALLOY SEMICONDUCTOR MUTUAL CONNECTION HAVING BARRIER LAYER OF HIGHLY PURE TITANIUM OR NIOBIUM

摘要

PURPOSE: To provide a barrier metal between an aluminum metallized layer and a silicon substrate by forming a substantially pure titanium or niobium layer between aluminum or its alloy conductor and the silicon substrate. CONSTITUTION: An apparatus includes an oxidized silicon substrate, and two laminated aluminum or alumimum alloy conduction passages. The lower conduction passage is completely separated from the silicon substrate with substantially pure titanium or niobium layer along the length of the conduction passage, and the titanium or niobium layer make direct contact with the aluminum or its alloy conduction passage and the silicon substrate. The upper layer conduction passage is separated from the first conduction passage with a proper dielectric layer such as silicon dioxide and the other titanium or niobium layer, and the titanium or niobium layer makes direct contact with any of the aluminum or its alloy conduction layer and the dielectric layer.