| 摘要 |
PURPOSE:To reduce the degree of a damage to be applied to a substrate by interrupting exposure with a focused ion beam to the midway of an ion beam resist layer not arriving at an operation layer, and conducting exposure to the boundary of the operation layer by an electron beam of a low acceleration voltage. CONSTITUTION:An operation layer 8 is coated with ion beam resist 2, and exposed with a focused ion beam 3 due to Si<++> ions so regulated at an acceleration voltage to approx. 100KeV as to be in depth not arriving at the layer 8. Ion beam resist 4 is developed and removed. The whole resist 2 is exposed with an electron beam 5 regulated to a low acceleration voltage of the degree that the resist 2 remaining by the exposure of the beam 3 can be exposed. The exposed ion beam resist 6 is developed and removed. Thus, the ratio of a damage to be applied to a substrate 1 is reduced. |
