| 摘要 |
A compound semiconductor device having a channel layer which is fabricated by alternately laminating an InxGa1-xAs compound semiconductor layer (0.7</=x</=1.0) with thickness of 16 atomic planes or less, and an InyGa1-yAs compound semiconductor layer (0</=y</=0.3) with thickness of 14 atomic planes or less, so that the thickness of the former is greater than that of the latter, in which n-type impurities are doped only in the InyGa1-yAs layer (0</=y</=0.3) side, and a ratio In/Ga on the whole is set at 1.1 or higher.
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