| 摘要 |
PURPOSE:To largely reduce the capacitance of a pad by forming an oxide film through an oxide film on the whole lower face of the pad. CONSTITUTION:An oxide region 8 is formed by forming an isolating region 4 by diffusing or the like on an epitaxially grown region 2, and then oxidizing only the upper face of the region 2 surrounded by a region 4 by selectively oxidizing technique in the same step as an oxide isolating step of other part. Then, the region 8 is interposed in addition to an oxide film 3 between a pad 1 and the region 2. Thus, the capacitance of the pad 1 is largely reduced. |
