| 摘要 |
PURPOSE:To enable the formation of a single crystal Y2O3 layer of good quality using a single crystal conductor or insulator such as Si or Sapphire as a base, by effecting chemically vapor-phase growth using a halide of yttrium as a growing material and specific gases as an oxidizing agent and the growth atmosphere, respectively. CONSTITUTION:The chemical vapor-phase growth is carried out using a base plate 6 of single crystal semiconductor or insulator, a halide of yttrium 4 as a growing material, a single or mixed gas 1a selected from O2, CO2 and H2O as an oxidizing agent, and an inert gas or H2 gas or their mixture 3a as a growth atmosphere gas to form a yttrium oxide film on the base 6 through the chemical vapor-phase process.
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