| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high quality epitaxial wafer with reduced crystal defects and a sufficiently large carrier time constant, and to provide a method of manufacturing a semiconductor device using the epitaxial wafer. <P>SOLUTION: A method of manufacturing an epitaxial wafer comprises the steps of: (a) forming an epitaxial layer 13 having an impurity concentration of 1×10<SP POS="POST">14</SP>cm<SP POS="POST">-3</SP>or more to 1×10<SP POS="POST">16</SP>cm<SP POS="POST">-3</SP>or less on an SiC substrate 12 having an impurity concentration of 3×10<SP POS="POST">18</SP>cm<SP POS="POST">-3</SP>by epitaxial growth; and (b) consecutively removing the whole of the SiC substrate 12 and part of the epitaxial layer 13 from the side of the SiC substrate 12 having a structure obtained by the step (a) while leaving a predetermined thickness of the epitaxial layer 13. <P>COPYRIGHT: (C)2013,JPO&INPIT |
