| 摘要 |
Disclosed is a method for directly growing a graphene membrane on a silicon substrate. A semiconductor silicon substrate is used as a substrate, after a reasonable pretreatment is carried out on the silicon substrate, a phthalocyanine compound is used as a solid carbon source, the graphene membrane is directly grown on the silicon substrate by a solid phase thermal cracking technique, under a certain atmosphere condition, by adjusting the reaction temperature, the kind of atmospheres, the flowing speed and the like, wherein a silicon substrate device sample deposited with the graphene membrane is as shown in the figure in the abstract. Furthermore, since the surface of the silicon substrate is covered with the graphene membrane, the sheet resistance of the silicon substrate is up to 1 Ω·□-1, which is equivalent to the conductivity of copper. The present invention is obtained in a non-hydrogen environment, with no metal as a catalyst, and the method is safe, environmentally friendly and simple; the resulting graphene membrane is easy to control in thickness, structure and size and has high plane orientation; the grown graphene can be directly used for manufacturing various devices without the need of a transferring process, which improves the electrochemical property and reliability of the devices, reduces the manufacturing complexity of the devices, and can achieve the industrial production. |
