| 摘要 |
PURPOSE:To prepare a uniform filmy single crystal of piezoelectric material having large surface free from composition segregation, by melting an oxide having a specific composition, making it amorphous by quenching, recrystallizing it under a specific temperature gradient. CONSTITUTION:An oxide having a composition shown by the formula (0<=x, y<=1) is put in a platinum crucible container, melted from the outside by high- frequency heating, and quenched by liquid quenching method, to give the amorphous oxide 1. The amorphous oxide 1 is processed into a shape like a battledore with a small tip width. The battledore-shaped amorphous oxide 1 is passed under the temperature gradient formed by the two heaters 4 set in parallel from its tip in the arrow direction. The maximum temperature of the temperature gradient is >= the crystallization temperature of the amorphous oxide 1 and <=the melting point of the oxide +300 deg.C, and the temperature gradient is 10- 1,000 deg.C/cm. Consequently, a seed crystal is formed first at the part where the oxide is passed through the temperature gradient at the beginning, recrystallization is advanced with the movement of the growth region 2, and the single crystal 3 of piezoelectrical material is gradually formed. |
