LIGHT-EMITTING DEVICE FABRICATED UTILIZING CHARGE GENERATION LAYER FORMED BY SOLUTION PROCESS AND FABRICATION METHOD THEREOF

摘要

Disclosed are a light emitting device using a charge generation layer formed through a solution process, and a fabrication method thereof. According to the present invention, provided is the light emitting device comprising a positive electrode, a negative electrode, a luminous layer, and a charge generation layer. The charge generation layer is formed with a layer-by-layer structure of a p-type layer made of an organic semiconductor and an n-type layer made of an oxide semiconductor by a solution process. The light emitting device of the present invention can reduce processing time, and uses a charge generation layer formed through a solution process which is not limited by semiconductor characteristics of a substrate.