| 摘要 |
PURPOSE:To simplify manufacture by transferring an Au bump to a semiconductor element from a bump preparing substrate and thermocompression-bonding the Au bump onto the substrate. CONSTITUTION:A Ti film 5 is formed onto a bump preparing substrate 4 composed of glass, etc., through sputtering evaporation, and a Pt film 6 is shaped onto the film 5, and used as an electrode for plating. Au bumps 3 are formed onto the film 6. A semiconductor element 1 is aligned and superposed from the upper sections of the Au bumps 3 while patterns surfaces are directed downward. When the semiconductor element 1 is thermocompression-bonded with solder coatings 11 in approximately 10mum shaped onto land patterns 10 consisting of Cu foils on a mounting substrate 9 by a hold-down jig 8 from an upper section while the semiconductor element 1 is directed downward so that the Au bumps 3 are conformed, the Au bumps 3 and the solder coatings 11 are alloyed and joined. Lastly, the whole surface is resin-coated for protecting the IC chip 1. |
