High-power sputtering source

摘要

The invention relates to a magnetron sputtering process that allows material to be sputtered from a target surface in such a way that a high percentage of the sputtered material is provided in the form of ions. According to the invention, said aim is achieved using a simple generator, the power of which is fed to multiple magnetron sputtering sources spread out over several time intervals, i.e. the maximum power is supplied to one sputtering source during one time interval, and the maximum power is supplied to the following sputtering source in the subsequent time interval, such that discharge current densities of more than 0.2 A/cm2 are obtained. The sputtering target can cool down during the off time, thus preventing the temperature limit from being exceeded.

主权项

1. A method for generating a plasma discharge with a discharge current density that is in at least some areas locally greater than 0.2 A/cm2, comprising steps of:
providing a power supply unit with a predefined maximum output; providing each of at least two magnetron sputtering sources with a predefined racetrack and a predefined thermal limit, wherein the racetracks are designed so small that when the maximum output of the power supply unit is applied on each of the at least two magnetron sputtering sources, the discharge current density is greater than 0.2 A/cm2; via the power supply unit, feeding a first output in a first of the at least two magnetron sputtering sources for a first time interval, wherein the first output is chosen sufficiently high so that a discharge current density greater than 0.2 A/cm2 is generated at least in one area locally and wherein the first time interval is chosen sufficiently small so that the predefined thermal limit of the first magnetron sputtering source is not exceeded; via the power supply unit, feeding a second output in a second of the at least two magnetron sputtering sources for a second time interval, wherein the second output is chosen high enough so that a discharge current density greater than 0.2 A/cm2 is generated at least in one area locally and wherein the second time interval is chosen sufficiently small so that the predefined thermal limit of the second magnetron sputtering source is not exceeded; wherein the power supply unit comprises at least two generators that are connected to one another in a master-slave configuration and in that the first and the second time intervals do not completely overlap.