| 摘要 |
<p>PURPOSE:To enable to largely reduce photocurrent by a method wherein the channel region on a thin film transistor is coated by extending a source electrode or a drain electrode. CONSTITUTION:The channel region of the transistor is coated with the extended source electrode, therefore no light is incident to the channel region. It is desirable that a gap 17 is as narrow as possible for the light incidence from the gap between the above-mentioned source electrode and the drain electrode. The width of the gap is determined by the limitation of patterning technique. On the other hand, the light incident from the gap 17 is mainly contributed to the carrier production in the drain region 11, therefore hardly participated in the generation of photocurrent. It is because normally the impurity density of the drain region 11 is very high and the lifetime and mobility of carriers generated are small.</p> |
