| 摘要 |
PURPOSE:To prevent the attraction of particles and mixed impurities into a film and the deterioration in quality of the film, by arranging chambers of a high temperature treatment and washing treatment, thereby performing continuously film formation as well as washing in a reacting film formation chamber. CONSTITUTION:A reacting film formation chamber 4 made of stainless steel which is equipped with an introduction and an exhaust ports 1 and 2 in the horizontal direction is conveyed in the inside of a high temperature treatment chamber 6 by a belt 5 and a pyrex substrate 3 is mounted in the reacting film formation chamber 4 and then, in the high temperature treatment chamber 6, a substrate temperature is kept at 460 deg.C by heating in an atmosphere of nitrogen and further, it has a temperature gradient 10 deg.C/cm in the vertical direction. A film is formed by using disilane that is diluted by hydrogen as a reaction gas. After forming the film, it is cooled at a temperature 100 deg.C in the air and the substrate 3 is taken out and then, the reacting film formation chamber 4 is conveyed in a washing chamber 10. A chlorine gas is used as a detergent and after etching, it is conveyed to install a pyrex substrate 3 newly and it is conveyed in the high temperature treatment chamber 6. In this way, all of films on the substrate are amorphous silicon and are lustrous ones where no particle is included at all. |
