| 摘要 |
A metal silicide contact to silicon devices which has broad application to almost all of the variety of silicon semiconductor devices is described. This contact with a substantial side component has particular advantage as the base contact for a bipolar transistor. However, contacts can be made to regions of any desired device regions with a variety of P+, N+, P, N, P-, N- and so forth conductivity types. Further, the contact can be an ohmic or Schottky contact. |
