发明名称 METHOD OF MONITORING SINGLE CRYSTAL DURING GROWTH
摘要 A single crystal (3) during growth is irradiated by an transversely elongate X-ray beam (9) and the diffracted X-ray beam (10) from the crystal (3) is monitored by an image amplifier (11) in a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal (3). In a further method, a half portion of the single crystal (3) during growth is irradiated by a transversely elongate X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth are displayed on one half portion of the display of the image amplifier (11) and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.
申请公布号 DE3477023(D1) 申请公布日期 1989.04.13
申请号 DE19843477023 申请日期 1984.12.14
申请人 SUMITOMO ELECTRIC INDUSTRIES LIMITED 发明人 TATSUMI, MASAMI C/O OSAKA WORKS OF SUMITOMO;SAWADA, SHIN-ICHI C/O OSAKA WORKS OF SUMITOMO;NAKAI, RYUSUKE C/O OSAKA WORKS OF SUMITOMO
分类号 C30B15/26;G01N23/207;(IPC1-7):C30B15/26 主分类号 C30B15/26
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