| 摘要 |
PURPOSE:To position a gate electrode highly accurately by a method wherein, after a first ion implantation layer of a first conductivity has been formed on a semiconductor substrate and a second ion implantation layer of a second conductivity has been formed on it, the first and the second ion implantation layers are activated. CONSTITUTION:Ions of an impurity are implanted into a compound semiconductor substrate 10; first ion implantation layers 11, 12 of a first conductivity type are formed on its surface; a first insulating film 14 is formed on a whole face of the substrate 10. Then, a second insulating film 16 having an opening 15 is formed on the first insulating film 14; ions of an impurity are implanted into the first ion implantation layers 11, 12 through the opening 15 in the second insulating film 16; a second ion implantation layer 13 of a second conductivity type is formed on the surface. Then, the second insulating film 16 is removed; while only a conductor layer 19 on an exposed face of the substrate 10 is left, a surface electrode 20 is formed; after that, an annealing operation is executed; the first and the second ion implantation layers 11-13 are activated. By this setup, a gate electrode can be positioned highly accurately with reference to a gate region of a fine size.
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