| 摘要 |
A memory circuit having an improved address decoder which is operable with a low power consumption and can be fabricated at a high-integration is disclosed. The memory comprises a logic means for decoding a part of address signals provided for a plurality of address lines of a memory cell array, and a plurality of transfer gates provided between the logic means and the address lines, in which one of those transfer gates is made enabled in response to a different part of the address signals thereby to transmit the output signal of the logic means to a selected row line through the enabled transfer gate. |
