Power semiconductor element and method for producing it

摘要

The invention relates to a semiconductor element for high powers and to a method for producing it. According to the invention, a temperature-detecting element is constructed on the same substrate as the power element. There is thus no need to provide a special temperature sensor, as a result of which the element can be constructed to be smaller. An excessively high temperature of the voltage element is detected precisely by the temperature-detecting element, as a result of which a thermal collapse of the power element is reliably prevented.