| 摘要 |
It is the object of the invention to provide a semiconductor device including an electrical contact to a monocrystalline silicon carbide layer, which can be either an ohmic contact or a rectifying contact, with improved characteristics and in particular with a lower contact resistance in the conduction state, and to provide a method for forming such electrical contact to a monocrystalline silicon carbide layer. A semiconductor device according to the invention comprises a monocrystalline silicon carbide layer (1); a metal compound layer (3) between one of the materials of the silicon carbide layer (1) and a first metal, which is formed on the silicon carbide layer (1) to form an electrical contact to with the silicon carbide layer (1), characterized in that the compound layer (3) is monocrystalline and has a thickness (di) in a range of 1 to 10 nm. In a method of the invention such monocrystalline compound layer (3) is obtained by forming a thin first metal layer (2) with a thickness (do) in a range from 0.5 nm to 5 nm onto the monocrystalline SiC layer (1) and by subsequent annealing. |
