发明名称 MANUFACTURE OF THIN-FILM TRANSISTOR
摘要 <p>PURPOSE:To prevent a disconnection by a method wherein, after a transparent conductive film has been formed on a whole face including the upper part of a resist left on a semiconductor film where a pattern has been formed, a conductive film on it is removed together with the resist and a source electrode and a drain electrode are formed on it. CONSTITUTION:When a pattern of a semiconductor film 3 is formed, a resist 21 formed on the semiconductor film 3 is left as it is; a conductive film 22 of one or more layers which include at least a transparent conductive film 14 to be used as a pixel electrode 8 and whose thickness is about the same as that of the semiconductor film 3 is generated. Then, the resist 21 is removed together with the conductive film 22 on the resist 21; patterns of a source electrode 5 and a drain electrode 4 are formed on a flat face including the surface of the semiconductor film 3 which has been obtained by removing the resist 21. By this setup, it is possible to prevent the source electrode and the drain electrode from being disconnected.</p>
申请公布号 JPH0195559(A) 申请公布日期 1989.04.13
申请号 JP19870254176 申请日期 1987.10.08
申请人 CASIO COMPUT CO LTD 发明人 KAMATA HIDEKI;YAMADA HIROYASU;OMURA TAKU
分类号 H01L27/12;G02F1/136;G02F1/1368;H01L21/336;H01L29/78;H01L29/786 主分类号 H01L27/12
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