| 摘要 |
<p>PURPOSE:To allow threshold values to be easily controlled by electric means for thin film transistors by forming a second gate electrode disposed on the opposite side of a first gate electrode for both source electrode and drain electrode, an insulating film being interposed therebetween. CONSTITUTION:On the surface of one 3 of a pair of transparent substrates which are oppositely disposed while interposing a display medium therebetween, a plurality of scan bus lines SB, a plurality of display electrodes E arranged in matrix form, first gate electrodes G of thin film transistors 1 corresponding to the display electrodes E, a source electrode S and a drain electrode D, both being oppositely disposed while interposing a gate insulating film 6 and an operating semiconductor film 5 on the first gate electrodes G, are arranged, they being connected to the scan bus line SB corresponding to the thin film transistor 1, relative display electrodes E, and to the next scan bus line. In the thin film transistor matrix having such constitution, a second gate electrodes G' are arranged on the opposite side of the first gate electrode G for both source electrode S and drain electrode D, an insulating film 4 being interposed therebetween.</p> |
