| 摘要 |
PURPOSE:To improve the gate activity ratio of a gate-array-type semiconductor element and to obtain a highly reliable semiconductor device, by extending one end of a gate electrode interconnection of a basic cell to a marginal region of the basic cell and connecting it with an interconnection in the marginal region through a through hole. CONSTITUTION:A semiconductor device carries a gate-arrayed semiconductor element in which a logic cell is constructed by properly combining a plurality of basic cells 2 each of which is constituted by at least a pair of p-MOS and n-MOS transistors 2a, 2b and gate electrode interconnections 10. One end of the gate electrode interconnection 10 of the basic cell 2 is extended to a marginal region of the basic cell 2 and the extended section 10a is connected with an interconnection in the marginal region 3 through a through hole 8. In this manner, it is possible to obviate the need if using many metallic interconnections on a basic cell. Accordingly, it is possible to improve the gate activity ratio of the semiconductor element and hence the reliability of the semiconductor device. |
