发明名称 METHOD AND APPARATUS FOR MONITORING PROCESS
摘要 PURPOSE:To enable defects of a substrate to be detected efficiently before corrosion proceeds in the dry etched substrate, by forming an Al alloy film containing at least Cu on the substrate to be treated and then measuring two-dimensional distribution of the Cu in the alloy film. CONSTITUTION:Following to a process of forming an Al alloy film containing at least Cu on a substrate to be treated, twodimentional distribution of the Cu in the alloy film formed on the substrate is measured. Apparatuses for measuring distribution of the Cu in the U alloy film by means of flow discharge emission spectral analysis technique may be exemplified by a glim glow discharge tube comprising a cathode 2, an anode 3, an insulating plate 4, a light transmitting window 5, inlet tube 6 for introducing a noble gas, exhaust tubes 7 and 8, and wafer cooling tubes 9 and 10. The discharge tube is lit on to provide a light-emitting region on the surface of the substrate opposed to the cylindrical section of the anode 3. The emitted light is transmitted by the light- transmitting window 5 opposed to the substrate 1 and an image processing device 14 displays the light-emitting region of the Cu through a two-dimensional spectroscope 12 and a CCD camera 13.
申请公布号 JPH0194633(A) 申请公布日期 1989.04.13
申请号 JP19870251484 申请日期 1987.10.07
申请人 HITACHI LTD 发明人 TSUJII KANJI;OKUDAIRA HIDEKAZU;NISHIMATSU SHIGERU;HIROBE YOSHIMICHI;NOJIRI KAZUO
分类号 G01N21/63;G01N21/65;G01N21/67;G01N23/22;H01L21/66 主分类号 G01N21/63
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