| 摘要 |
PURPOSE:To obtain a high critical current density by a method wherein an oxidizing gas is transformed into a plasma, a magnetic field is exerted simultaneously on a face to be formed and an annealing operation by magnetism, heat and the plasma is executed in order to rearrange crystal orientation during the annealing operation. CONSTITUTION:Oxygen or an oxide gas which has been introduced into a plasma generation chamber 30 is transformed into a plasma by using an electromagnet 15 and a microwave oscillator 14; active oxygen is treated in an activated space 31 while a magnetic field is being exerted on an already formed oxide superconducting material 10. During this process, the plasma generates hybrid resonance having an interaction between an electric field and the magnetic field under a pressure of 1-800Torr; a face to be formed is arranged in the hybrid resonance space. A rearrangement is executed by exerting the magnetic field through the superconducting material and by injecting the active oxygen into the material; then, a crystal of the oxide superconducting material is oriented to be perpendicular to or parallel with the face to be formed. By this setup, a large critical current density can be obtained. |
