| 摘要 |
The purpose of the present invention is to provide a nonvolatile memory device having improved performance by adjusting a pulse width of a program voltage according to a program operation to be performed, an operating method thereof, and a programming method thereof. According to an embodiment of the present invention, a programming method of a nonvolatile memory device, which includes a plurality of memory cells storing at least two bits, comprises the steps of: programming first page data into selected memory cells of the memory cells connected to a selected word line by performing a first program operation based on a plurality of program voltages having a first pulse width; and programming second page data into the selected memory cells, in which the first page data is programmed, by performing a second program operation based on a plurality of program voltages having a second pulse width different from the first pulse width. |
