| 摘要 |
<p>PURPOSE:To reduce any leakage current by reducing the thermal stress imposed on the surface of an insulating film and eliminating any crack caused on the insulating film by a method wherein a polyimide layer provided with multiple holes is laid between a resin body and the insulating film of a semiconductor device. CONSTITUTION:The first insulating film is formed on a semiconductor substrate 1; the second polyimide insulating film 4 containing a pad 3 is formed on the insulating film 2; and then a polyimide layer 6 is formed on the surface of the second insulating film 4. Next, pores in diameter of 2-5mum are formed in density of 60,000-10,000 each/mm<2> on the layer 6 by photolithography and simultaneously the layer 6 on the pad 3 and an electrode is removed to make an opening. Successively, after assembling a semiconductor chip and a leadframe, overall surface is sealed with region such as epoxy resin etc., to form a resin body 9. Finally, the layer 6 with multiple pores is laid between the resin body 9 and the second insulating film 4 so that most of the thermal stress imposed during the heating and cooling down cycle may be absorbed to eliminate any crack caused on the second insulating film 4 for reducing any leakage current in a semiconductor device.</p> |
