| 发明名称 |
Integrated circuits comprising insulating regions. |
| 摘要 |
<p>Isolation trenches are formed in a semiconductor, e.g. silicon, substrate by selectively doping the substrate and preferentially oxidising the doped material. Typically the dopant is arsenic or phosphorus and preferably the substrate is doped to a level of at least 5 x 10 <1><9>cm<-><3>.</p> |
| 申请公布号 |
EP0311354(A2) |
申请公布日期 |
1989.04.12 |
| 申请号 |
EP19880309237 |
申请日期 |
1988.10.04 |
| 申请人 |
STC PLC |
发明人 |
OJHA, SURESHCHANDRA MISHRILAL;ROSSER, PAUL JOHN;MOYNAGH, PHILIP BERNARD |
| 分类号 |
H01L21/316;H01L21/762 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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