| 摘要 |
<p>PURPOSE: To prevent the decomposition and deterioration of a silicon ladder polymer thin film by installing a filter between a stage and an ultraviolet lamp for blockading only ultraviolet rays with short wave length, which decompose and deteriorate a protection film, in ultraviolet rays radiated from an ultraviolet lamp. CONSTITUTION: When ultraviolet rays 4 emitted from an ultraviolet lamp 2 reach a filter 5, the ultraviolet rays with wave length of 260 nm or less is cut by this filter 5, and only the ultraviolet rays with wave length of 260 nm or more transmit the filter 5 and reach silicon ladder polymer thin film 1a of an EPROM 1, subsequently transmit the silicon ladder polymer thin film 1a to excite electric charges in a floating gate of the EPROM 1 and exclude the electric charges from the floating gate to delete the memory content of the EPROM 1. In this way, the irradiation of the ultraviolet rays in which the ultraviolet rays with the short wave length is cut does not decompose and deteriorate the thin film 1a, and the irradiation of the ultraviolet ray with wave length of 300 nm, which contributes to the memory deleting action of the EPROM 1, on the EPROM 1 brings the effective deleting operation.</p> |
