| 摘要 |
PURPOSE:To enhance pyroelectric sensitivity while efficiently storing the quantity of heat of incident infrared rays in a pyroelectric material, by forming a thin insulating film to the upper surface of a semiconductor substrate having a through-hole formed to the predetermined region thereof and arranging a pyroelectric element thereon. CONSTITUTION:An opening 13 is formed to an Si semiconductor substrate 1 under a pyroelectric element 10 and a spacer 14 is arranged to the upper end part of the opening 13 and the insulating film 7 on the under side of the pyroelectric element 10 is made thin by the thickness of said spacer 14. When infrared rays are incident to the pyroelectric element 10 in the direction shown by an arrow A, said infrared rays transmit through an upper electrode 12 to reach a pyroelectric material film 11 and impart the quantity of heat thereto. Since poling is applied to the pyroelectric material film 11, potential is generated in a lower electrode 8b and the electrode 12 by the polarizing effect corresponding to said quantity of heat. Since the insulating film 7 is sufficiently thin, the loss of the quantity of heat by the heat conductivity thereof is extremely low. As a result, the quantity of heat by infrared rays is efficiently stored in the pyroelectric material film 11 and, therefore, detection sensitivity is markedly enhanced. The heat conductivity through the electrode 8b and a conductive film 8a is considered but, since said film 8a is extremely thin, the loss thereof is reduced. |
