<p>A dynamic random access memory includes a dummy word line (40) which has an electric characteristic identical to that of an actual word line (100). The dummy word line (40) is charged up and is then discharged as in case of the actual word line. A latched row address in a row address latch circuit (23) is reset when the potential of the dummy word line (40) becomes equal to a predetermined low potential due to the discharge operation for the dummy word line (40).</p>
