发明名称 PROCESS OF RELEASING SEMICONDUCTOR WAFER FROM PLATE
摘要 PURPOSE:To enable the releasing temperature to be controlled quickly and accurately by increasing the heating and cooling efficiency by a method wherein a semiconductor wafer is released from a plate immersed in a temperature- controlled solution. CONSTITUTION:A plate 2 is immersed in cold water 1 temperature-controlled at 10 deg.C to chill-set a bonding agent 4. Then, a sharp edge 7 is forcibly inserted into the gap between the bonding agent 4 and the plate 2 by the force of an air cylinder 8 so that a semiconductor wafer 3 may be released from the oblique plate 2 to be dropped into a carrier groove 6.
申请公布号 JPH0193126(A) 申请公布日期 1989.04.12
申请号 JP19870250213 申请日期 1987.10.03
申请人 OISHI TAKAHIRO 发明人 OISHI TAKAHIRO
分类号 H01L21/304 主分类号 H01L21/304
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