| 摘要 |
PURPOSE:To increase the uppermost limit of frequency by reducing the gate capacity in the structure of a multi-source vertical type MOS-FET. CONSTITUTION:A plurality of semiconductor regions 2' of reverse conductivity type are provided on the surface of a semiconductor substrate 1 of one conductivity type, and source regions 3 of one conductivity type, a gate oxide film 3, and a poly Si film 4 are provided. Next, a nitride film 8 is formed on the poly Si film 4, and then window opening is performed at the center of a gate electrode 4a. Then, an Si oxide film 9 is formed at the part uncovered with the nitride film by performing thermal oxidation. An oxide film 7 is formed over the entire surface after removing the nitrode film 8 and the poly Si film 4 on the source regions 6. Apertures are provided through the oxide film 7 on the source regions, and thereafter a source electrode 10 is formed by vapor-depositing Al over the entire surface. Further, a drain electrode 11 is provided on the back surface of the semiconductor substrate 1, resulting in the formation of the multi- source vertical type MOS-FET. |
