| 发明名称 |
Method of manufacturing a semiconductor device comprising a silicon oxide layer protecting a PN junction. |
| 摘要 |
<p>The invention relates to a method of manufacturing a semiconductor device, in which methylated silyloxy groups are formed on a silicon oxide layer which protects a PN junction, the methylated silyloxy groups being formed to reduce the leakage current of the device. The method employs a solution in which an amine is present which is at least di-substituted.</p> |
| 申请公布号 |
EP0311173(A1) |
申请公布日期 |
1989.04.12 |
| 申请号 |
EP19880202082 |
申请日期 |
1988.09.26 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
PONJEE, JOHANNES JACOBUS;TOUWSLAGER, FREDERICUS JOHANNES;CAMPS, IVO GODFRIED JOZEF |
| 分类号 |
H01L21/316;H01L21/312;H01L23/29 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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