| 摘要 |
PURPOSE:To reduce the width of a junction and attain an increase in the effective photovoltaic region by a method wherein a first electrode is connected to an adjoining second electrode by a scribe section provided by removing a linear section from an amorphous semiconductor layer by using a high energy beam. CONSTITUTION:On an insulating substrate 14, first electrodes 18 are formed, each composed of a main section 10 and an extension 17. Then an amorphous semiconductor layer 20 is attached to them. A high energy beam is thrown upon an extension 17 for a partial removal of the semiconductor layer 20 for the formation of a scribe section 22. Second electrodes 26 are then formed on them, to be electrically connected by the scribe section 22 in the extension 17 overlapping an extension 25. Finally, a protecting film 28 is provided for the completion of a semiconductor device 10 of this design. With a scribe section being formed through application of a narrow high-energy beam, the area that electrodes require for their connection is quite small and other regions may be used for power generation. This design greatly enlarges the area to serve as an effective photovoltaic region. |
