| 摘要 |
PURPOSE:To increase integration density of memory, and decrease soft error generating rate of memory, by constituting memory with DRAM, and constituting memory cells of DRAM on the main surface part of a well region. CONSTITUTION:Memory is constituted with DRAM, and memory cells M of the DRAM are constituted on the main surface part of a well region 31. Therefore, the number of elements constituting the memory cells M of the DRAM can be decreased, and a potential barrier layer for minority carrier can be constituted between a substrate 30 under the memory cells M and the well region 31. Thereby increasing integration density of memory, and decreasing soft error generating rate of memory. |
