| 摘要 |
<p>Transparent films of silicon dioxide are produced on a substrate by sputtering silicon toward the substrate from a silicon target. The target is clamped to the remainder of the cathode along substantially the entire length of its edges, by a clamp set of at least one clamp. Each clamp has an outer surface extending upwardly away from the target surface to a position thereabove. The target is furthermore covered by a baffle disposed between the entire target and the substrate. Oxygen is admitted between the substrate and baffle at a rate to oxidize silicon sputtering toward the substrate, while not oxidizing the target. An rf discharge is applied to the substrate at a power density substantially .08 to .16 watts cm-2. The substrate is dimensioned relative to the cathode, and spaced therefrom, so that the foregoing rf discharge at the substrate electrode, generates a self-bias voltage thereon, of between substantially -70 to -100 volts. The total open area of the baffle used in the foregoing method, is preferably less than 50% of the target surface.</p> |
