| 摘要 |
PURPOSE:To control gas pressure in the course of firm formation with high precision by providing a pressure-regulating means relaxing pressure fluctuation to at least either of a gas-introduction system and an exhaust system in a sputtering device. CONSTITUTION:Separately from an exhaust system 6 to which a main valve 12 is provided, an exhaust pipe 101 to which a variable orifice 109 and an auxiliary valve 104 are provided is connected to a vacuum vessel 3, and a vessel 102 for regulating pressure is provided to another end of the exhaust pipe 101, and further, this vessel 102 is connected to the exhaust system 6 via an exhaust pipe 103. In the above constitution, the main valve 12 is opened in a state where the auxiliary valve 104 is closed, and the vacuum vessel 3 is evacuated by means of an exhaust pump 105. Subsequently, the main valve is closed and a gas is introduced from a gas-introduction system 5 in a state where the auxiliary valve 104 is opened, and, when the pressure in the vacuum vessel 3 reaches the prescribed value, electric power is applied to a high-frequency power source 7 to produce plasma 8. After the initiation of electric discharge, a shutter 11 is opened in a state where the plasma is stably produced, and then, a film is formed on a specimen 4. By this method, the fluctuation of pressure in the vacuum vessel 3 in the course of film formation can be minimized. |
