| 摘要 |
PURPOSE:To increase operation speed, and decrease soft error generating rate, by constituting the memory cell of a dynamic type random access memory(DRAM) in a Stacked capacitor structure. CONSTITUTION:The memory cell M of a DRAM 21 is constituted in a stacked capacitor structure. In the memory cell M of stacked capacitor structure, the area of a diffusion layer constituting a part of a data storing capacitor element C, that is, the area of a semiconductor region 39 on the side of a memory cell selecting MISFET Qs which is not connected to a bit line 46, is reduced and the incidence provability of alpha-ray can be decreased. The area of the other parts of the data storing capacitor element C which are not affected by the alpha-ray can be enlarged to increase a data storing capacity value. Thereby realizing the high speed cycle time of the DRAM 21, and decreasing the soft error of the DRAM 21. |
