Method for measuring a characteristic of semiconductor memory device

摘要

Method for measuring power supply current, e.g., standby current of a random access memory in which, before starting measurement of the power supply current, data is read-out from memory cell of the random access memory and opposite data is written in the memory cell so that the random access memory enters into an unstabilized state. By use of this method, the measurement of the maximum power supply current can be conducted precisely.