| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can increase a flow rate of a first liquid on a principal surface of a substrate thereby to favorably remove foreign materials such as particles adhered to the principal surface of the substrate.SOLUTION: A substrate processing apparatus includes a nozzle 4. The nozzle 4 has an inner tube 35 with a first flow channel 42 formed inside. An annular lower discharge port 49 is zoned between a bottom edge of the inner tube 35 of the nozzle 4 and a top face of a substrate W. The lower discharge port 49 discharges a process liquid flowing along the first flow channel 42 radially in a horizontal direction. The nozzle 4 is held by a nozzle arm 17 via a nozzle holding unit 16 in a state capable of relative displacement along a vertical direction. By discharge of the first liquid from the lower discharge port 49, upward force acts on the nozzle 4. This allows the lower discharge port 49 to be formed to have an extremely minute opening width W3.SELECTED DRAWING: Figure 4 |
