| 摘要 |
<p>PURPOSE:To prevent the deterioration in characteristics caused by the light from a gate electrode side, by cutting off incident light into a semiconductor channel part by making a semiconductor film smaller than the gate electrode. CONSTITUTION:A gate electrode pattern 3, a gate insulating film 2 and a semiconductor film pattern 1 are laminated on a glass substrate 11. The semiconductor film pattern 1 is formed so as to be smaller than the gate electrode pattern 3. When the thickness of the insulating film is 0.3mum, it is desirable that the semiconductor pattern 1, the gate electrode pattern 3, and the spacing corresponding with edge parts of both surfaces are more than or equal to 1mum. On a semiconductor pattern, a very fine source 4 of several mum width and a drain electrode 5 are deposited via a N-type semiconductor film 6 which is highly doped. By this electrode arrangement, incident light into a semiconductor channel part is cut off. Thereby preventing the characteristics deterioration of a thin film transistor caused by light irradiation.</p> |
