发明名称 |
Compound semiconductor integrated circuit device |
摘要 |
A compound semiconductor integrated circuit device including a heterojunction bipolar transistor and a field effect transistor. The heterojunction bipolar transistor has three compound semiconductor layers (type n-p-n or p-n-p) and makes a channel region or a channel-electron-supplying region of a field effect transistor with one of the three compound semiconductor layers.
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申请公布号 |
US4821090(A) |
申请公布日期 |
1989.04.11 |
申请号 |
US19870031228 |
申请日期 |
1987.03.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
YOKOYAMA, NAOKI |
分类号 |
H01L29/812;H01L21/331;H01L21/338;H01L21/8222;H01L21/8232;H01L21/8248;H01L21/8252;H01L27/06;H01L29/16;H01L29/205;H01L29/73;H01L29/737;H01L29/778;H01L29/80;(IPC1-7):H01L27/02 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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