| 摘要 |
PURPOSE:To avoid a shock at the time of joining, and to remove the cracking of a semiconductor pellet by bringing dead weight applied at the time of wire- bonding joining to optimum values at each stage. CONSTITUTION:Light dead weight of approximately 40g is applied in an instant when a capillary chip 3 is mounted onto the conductive surface of a semiconductor device 2. When ultrasonic vibrations are applied, the dead weight is changed over to load of approximately 60g where the impedance of an ultrasonic horn 5 is optimized, and ultrasonic vibrations effective for joining are applied. Ultrasonic vibrations are stopped, 100g load is applied, and a spherical bonding wire 3 deformed at the tip of a capillary is held firmly in order to efficiently improve thermal diffusion. Accordingly, a shock at the time of joining is avoided, thus removing the cracking of the semiconductor device 2. |
