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发明名称
EXTRINSIC GETTERING METHOD FOR SEMICONDUCTOR
摘要
申请公布号
JPS6490538(A)
申请公布日期
1989.04.07
申请号
JP19870249441
申请日期
1987.10.01
申请人
NEC CORP
发明人
OSHITA YOSHIO
分类号
H01L21/322
主分类号
H01L21/322
代理机构
代理人
主权项
地址
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