| 摘要 |
<p>PURPOSE:To produce an element suitable for lowering voltage easily, by bonding fine powder of semiconductor material containing MnO2 and Pr6O11 and fine powder of metal or metal oxide through insulating binder. CONSTITUTION:Fine powder semiconductor material 6 containing MnO2 and Pr6O11 and applied with an insulating film 9 and fine powder 7 of metal or metal oxide are bonded through an insulating binder 8. Then electrodes 1, 2 are arranged entirely to produce an element having high voltage nonlinear factor even under a low current zone. Since the powder 7 is placed, electrical connection between the materials 6 is stabilized and an element having scarce fluctuation of characteristic can be obtained, thus enabling easy production of an element suitable for lowering of voltage.</p> |
