An electronic semiconductor device, in particular a silicon-gate field-effect MOS transistor, for high input voltages.

摘要

An electronic semiconductor device (1), in particular a silicon-gate field-effect MOS transistor obtained from a C MOS process and adapted for high input voltages, comprises a so-called Well pocket (3) having opposite doping from that of the semiconductor substrate (2) and inside which there are formed the source (4) and drain (5) zones of the transistor, as well as a layer (5a) with opposite doping from that of the Well pocket (3) and forming a side extension of the transistor drain (5) zone and being self-aligned to the gate oxide (6a) and covered with a layer of an isolating oxide (10). That layer (5a) is doped at a lower dopant concentration than that of the drain (5) zone, and the device (1) so made can also operate at significantly higher voltages than those applicable to other components of a circuit to which it is integrated.