| 摘要 |
This invention provides a non-volatile semiconductor memory having a first node (12) and a second node (Vss), the second node having a ground potential, comprising: a plurality of non-volatile memory cells (16) each having a drain and a threshold potential, the cells (16) for storing data written into the cells (16) at a predetermined normal writing voltage; a plurality of bit lines (14), each memory cell (16) being connected to one of the bit lines (14) for transferring data to and from the memory cells (16); and a circuit (11, 12, 13, 19, 20, 21) connected to the bit lines (14) for simultaneously testing the memory cells (16) of all the bit lines (14) at the normal writing voltage to detect changes in the threshold potential. The circuit (11, 12, 13, 19, 20, 21) acts to reduce a writing supply voltage Vpp to the normal writing voltage by using a dummy memory cell (20), to simulate the voltage drop from Vpp which would be experienced in the normal write mode, so that the memory cells are not unduly stressed during testing. |
