| 摘要 |
PURPOSE:To obtain a bonding stress-induced deterioration free schottky diode without losing the characteristic thereof by making the schottky diode consist of a ring-shaped schottky junction and an electrode metal which is formed, while being connected to a schottky junction forming metal, on an insulating film surrounded by the ring. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1, the insulating film 2 having a ring-shaped window. A ring-shaped schottky junction 3 is formed while a schottky forming metal is bonded to the semiconductor substrate, which is exposed to the window. An electrode metal 4 which is connected to the ring-shaped schottky forming metal is formed on the insulating film 2 surrounded by the ring 3, extending further towards the outside of the ring 3. For example, by providing the same schottky junction area and electrode area as those of a conventional type, the schottky diode formed according to the constitution has not only the same electric properties but also is free from stresses to be caused at the time of bonding since an electrode metal bonding part is located on the insulating film inside the ring, whereby the schottky junction is free from deterioration. |
