发明名称 |
Semiconductor laser device |
摘要 |
A V-channel inner stripe semiconductor laser device comprising a multi-layered growth crystal having an active layer for laser oscillation but no substrate, with a buffer layer formed on the multi-layered growth crystal thicker than all of the layers of the growth crystal, where the multi-layered growth crystal and buffer layer are sandwiched between an n-sided electrode and a p-sided electrode, wherein a pair of mesa-striped channels are formed outside of the V-channel to remove the outside of the optical waveguide formed in the active layer corresponding to the V-channel.
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申请公布号 |
US4819244(A) |
申请公布日期 |
1989.04.04 |
申请号 |
US19860870450 |
申请日期 |
1986.06.04 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YAMAMOTO, SABURO;HAYASHI, HIROSHI;MORIMOTO, TAIJI |
分类号 |
H01S5/00;H01S5/02;H01S5/223;H01S5/227;H01S5/24;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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