发明名称 |
Silicide contact plug formation technique |
摘要 |
An integrated circuit fabrication process for improving step coverage of the metal lines and of metal layer interconnections is disclosed. A conductive polysilicon, polycide, or polycide-on-polysilicon plug is formed in contact apertures by successive silicidation sequences of silicon/refractory metal deposition and heat treatment. A preceding silicide may also be removed prior to a succeeding silicidation to reduce silicon lining.
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申请公布号 |
US4818723(A) |
申请公布日期 |
1989.04.04 |
申请号 |
US19870119260 |
申请日期 |
1987.11.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YEN, YUNG-CHAU |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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